View TISPPBL3_588218.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

oH V SC AV ER OM AI SIO PL LA N IA BL S NT E
TISPPBL3 DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC)
*R
TISPPBL3 Programmable Protector
Overvoltage Protection for listed SLICs
D Package (Top View)
High Voltage Capability Supports Battery Voltages Down to -150 V Specified 2/10 Impulse Limiting Voltage - Voltage-Time Envelope Guaranteed - Full -40 C to 85 C Temperature Range Feed-Through Package Connections - Minimizes Inductive Wiring Voltages ............................................ UL Recognized Components
K2 K2 A G1,G2 A
SLIC PBL 3762A/2 PBL 3762A/4 PBL 3764A/4 PBL 3764A/6 PBL 3766 PBL 3766/6 PBL 3767 PBL 3767/6 PBL 3860A/1 PBL 3860A/6 PBL 386 10/2 PBL 386 11/2 PBL 386 14/2 PBL 386 15/2 PBL 386 20/2 PBL 386 21/2 PBL 386 30/2 PBL 386 40/2 PBL 386 50/2 PBL 386 61/2 PBL 386 65/2 PBL 387 10/1
TISPPBL3
(Tip)
K1 NC
1 2 3 4
8 9 6 5
K1 (Tip) A A (Ground) (Ground)
MD6XANA
(Gate) G (Ring) K2
K2 (Ring)
NC - No internal connection Terminal typical application names shown in parenthesis
Device Symbol
K1 K1
Terminals K1, K2 and A correspond to the alternative line designators of T, R and G or A, B and C. The negative protection voltage is controlled by the voltage, VGG, applied to the G terminal. SD6XAEA
See Applications Information for earlier SLIC types.
Rated for International Surge Wave Shapes
Wave Shape 2/10 s 10/700 s 10/1000 s
Standard GR-1089-CORE ITU-T K.20, K.21, K.45 GR-1089-CORE
ITSP A 100 40 30
How To Order
For Standard Termination Finish Order As TISPPBL3DR TISPPBL3D For Lead Free Termination Finish Order As TISPPBL3DR-S TISPPBL3D-S
Device TISPPBL3
Package D (8-pin Small-Outline)
Carrier Embossed Tape Reeled Tube
Customers are advised to obtain the latest version of the relevant Ericsson Microelectronics SLIC information to verify, before placing orders, that the information being relied on is current.
*RoHS Directive 2002/95/EC Jan 27 2003 including Annex
Ericsson is a trademark of Telefonaktiebolaget LM Ericsson.
OCTOBER 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISPPBL3 Programmable Protector
Description
The TISPPBL3 is a dual forward-conducting buffered p-gate overvoltage protector. It is designed to protect the Ericsson Microelectronics SLICs (Subscriber Line Interface Circuits) against overvoltages on the telephone line caused by lightning, a.c. power contact and induction. The TISPPBL3 limits voltages that exceed the referenced SLIC supply rail levels. The SLIC line driver section is typically powered by a negative voltage, VBat, in the region of -10 V to -90 V. The protector gate is connected to this negative supply. This references the protection (clipping) voltage to the negative supply voltage. As the protection voltage will track the negative supply voltage, the overvoltage stress on the SLIC is minimized. The TISPPBL3 buffered gate design reduces the loading on the SLIC supply during overvoltages caused by power cross and induction. Positive overvoltages are clipped to ground by diode forward conduction. Negative overvoltages are initially clipped close to the SLIC negative supply rail value. If sufficient current is available from the overvoltage, then the protector will crowbar into a low voltage ground referenced on-state condition. As the overvoltage subsides, the high holding current of the crowbar prevents d.c. latchup. These monolithic protection devices are fabricated in ion-implanted planar vertical power structures for high reliability and in normal system operation they are virtually transparent. The TISPPBL3 has an 8-pin plastic small-outline surface mount package, D suffix, and is a universal substitute for TISPPBL1D and TISPPBL2D devices.
Absolute Maximum Ratings, -40 C TA 85 C (Unless Otherwise Noted)
Rating Repetitive peak off-state voltage, VGK = 0 , -40 C TJ 85 C Repetitive peak gate-cathode voltage, VKA = 0 , - 40 C TJ 85 C Non-repetitive peak on-state pulse current (see Notes 1 and 2) 10/1000 s (Telcordia GR-1089-CORE Issue 2, with Revision 1, February 1999) 5/310 s (IT U-T K.20, K.21 & K.45, K.44 open-circuit voltage wave shape 10/700 s) 2/10 s (Telcordia GR-1089-CORE Issue 2, with Revision 1, February 1999) Non-repetitive peak on-state current, 50/60 Hz, TA = 25 C (see Notes 2 and 3) 100 ms 1s 5s 300 s 900 s Non-repetitive peak gate current, 1/2 s pulse, cathodes commoned (see Note 1) Operating free-air temperature range Junction temperature Storage temperature range ITSM 10 4.4 2.1 0.64 0.60 40 -40 to +85 -40 to +150 -65 to +150 A Symbol VDRM VGKRM Value -170 -160 30 40 100 Unit V V
ITSP
A
I GSM TA TJ Tstg
A C C C
NOTES: 1. Initially, the protector must be in thermal equilibrium with -40 C T 85 C. The surge may be repeated after the device returns J to its initial conditions. Above 85 C, derate linearly to zero at 150 C lead temperature. 2. These non-repetitive rated currents are peak values for either polarity. The rated current values may be applied either to the Ring to Ground or to the Tip to Ground terminal pairs. Additionally, both terminal pairs may have their rated current values applied simultaneously (in this case the Ground terminal current will be twice the rated current value of an individual terminal pair). 3. Values for VGG = -120 V. For values at other voltages see Figure 4. Above 25 C, derate linearly to zero at 150 C lead temperature.
Recommended Operating Conditions
See Figure 10 C1 RSA RSB Gate decoupling capacitor Series resistance for GR-1089-CORE first-level and second-level surge survival Series resistance for GR-1089-CORE first-level surge survival Series resistance for ITU-T recommendation K.20, K.21 and K.45 for coordination with a 400 V primary protector Min 100 40 25 10 Typ 220 Max Unit nF
OCTOBER 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISPPBL3 Programmable Protector
Electrical Characteristics, -40 C T A 85 C (Unless Otherwise Noted)
Parameter ID V(BO) t(BR) VF VFRM tFR IH IGKS IGAT Off-state current Breakover voltage Breakdown time Forward voltage Peak forward recovery voltage Forward recovery time Holding current Gate reverse current Gate reverse current, on state Gate reverse current, forward conducting state Gate trigger current Gate trigger voltage Gate impulse breakover voltage Anode-cathode offstate capacitance VD = VDRM, VGK = 0 IT = -100 A, 2/10 generator, VGG = -100 V, Figure 3 test circuit (see Figure 2) IT = -100 A, 2/10 generator, V (BR) < VGG, Figure 3 test circuit (see Figure 2 and Note 4) I F = 5 A, tw = 500 s IF = 100 A, 2/10 generator, Figure 3 test circuit (see Figure 2 and Note 4) IF = 100 A, 2/10 generator, Figure 3 test circuit (see Figure 2 and Note 4) I T = -1 A, di/dt = 1A/ms, V GG = -50 V, VGG = VGK = VGKRM, VKA = 0 IT = -0.5 A, t w = 500 s, VGG = -50 V, TA = 25 C TJ = -40 C TJ = 85 C VF > 5 V VF > 1 V -150 -5 -50 -1 Test Conditions TJ = -40 C TJ = 85 C Min Typ Max -5 -50 -120 1 3 8 1 10000 Unit A A V s V V s mA A A mA
IGAF IGT VGT VGK(BO) CAK
IF = 1 A, tw = 500 s, VGG = -50 V, TA = 25 C I T = -5 A, t p(g) 20 s, VGG = -50 V, TA = 25 C I T = -5 A, t p(g) 20 s, VGG = -50 V, TA = 25 C IT = -100 A, 2/10 generator, Figure 3 test circuit (see Figure 2 and Note 4) f = 1 MHz, V d = 1 V, IG = 0, TA = 25 C (see Note 5) VD = -3 V VD = -50 V
-10 5 2.5 20 110 60
mA mA V V pF pF
NOTES: 4. The diode forward recovery and the thyristor gate impulse breakover (overshoot) are not strongly dependent of the SLIC supply voltage value (VGG ). 5. These capacitance measurements employ a three terminal capacitance bridge incorporating a guard circuit. The unmeasured device terminals are a.c. connected to the guard terminal of the bridge.
Thermal Characteristics
Parameter RJA Junction to free air thermal resistance Test Conditions Ptot = 0.52 W, TA = 85 C, 5 cm 2, FR4 PCB Min. Typ. Max. 160 Unit C/W
OCTOBER 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISPPBL3 Programmable Protector
Parameter Measurement Information
PRINCIPAL TERMINAL V-I CHARACTERISTIC +i IFSP (= |I TSP |) Quadrant I Forward Conduction Characteristic GATE TRANSFER CHARACTERISTIC +iK
IFSM (= |I TSM|) IF VF VGK(BO) VGG (Circuit VB ) VD ID IGT +v -iG IGAF +i G IF
-v
I(BO) IS
IH VT IT ITSM IG IGAT IT
V(BO)
VS
Quadrant III Switching Characteristic ITSP -i
PM6XAIB
IK -iK
Figure 1. Principal Terminal And Gate Transfer Characteristics
PROTECTOR MAXIMUM LIMITING VOLTAGE vs TIME
10 MAX VFRM = 8 V 5 0 VOLTA GE - V VGG = VB 1 s 10 ms Time 1 s
VGG
VGG -10
VGG -20
MAX V(BO) = VGG -20 V
VGG -3
PM6XALC
Figure 2. Transient Limits For TISPPBL3 2/10 Impulse Limiting Voltage
OCTOBER 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISPPBL3 Programmable Protector
Parameter Measurement Information
PARAMETER MEASUREMENT INFORMATION
IMPULSE RS CURRENT 40 IT, IF LIMITING VOLTAGE VK , VF Th4 DUT (TISPPBLx)
Hi ECAT WITH E505 2/10 OUTPUT NETWORK
Lo
Th5 RS = ONE SECTION OF A BOURNS 4B04B-523-400 OR A 4B04B-524-400 LINE FEED RESISTOR NETWORK IG VB (VGG ) AI6XBACE
C1 220 nF
Figure 3 TEST CIRCUIT FOR MEASUREMENT OF LIMITING VOLTAGE
Thermal Information
PEAK NON-RECURRING AC vs CURRENT DURATION
20 I TSM -- Peak Non-Recurrent 50 Hz Current -- A 15 10 8 7 6 5 4 3 2 1.5 1 0.8 0.7 0.6 0.5 0.01
TI61AF
RING AND TIP TERMINALS: Equal ITSM values applied simultaneously GROUND TERMINAL: Current twice ITSM value EIA /JESD51 Environment and PCB, TA = 25 VGG = -80 V VGG = - 60 V
VGG = -100 V VGG = -120 V 0.1 1 10 100 t -- Current Duration -- s 1000
Figure 4
OCTOBER 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISPPBL3 Programmable Protector
APPLICATIONS INFORMATION
Operation of Gated Protectors
The following SLIC circuit definitions are used in this data sheet: VBAT -- Package pin label for the battery supply voltage. VBat -- Voltage applied to the VBAT pin. VB -- Negative power supply voltage applied to the VBAT pin via an isolation diode. This voltage is also the gate reference voltage, VGG, of the TISPPBL3. When the isolation diode, D1, is conducting, then VBat =VB + 0.7. The isolation diode, D1 in Figure 5, is to prevent a damaging current flowing into the SLIC substrate (VBAT pin) if the VBat voltage becomes more negative than the VB supply during a negative overvoltage condition. Each SLIC must have its own isolation diode from the VB voltage supply. (Maytum, M J, Enoksson, J & Rutgers, K, Coordination of overvoltage protection and SLIC capability, International IC - China Conference Proceedings 2000, pp. 87 - 97.) Figure 5 and Figure 6 show how the TISPPBL3 limits overvoltages. The TISPPBL3 thyristor sections limit negative overvoltages and the diode sections limit positive overvoltages.
SLIC PROTECTION TISPPBLx Th4
SLIC PROTECTION TISPPBLx Th4
SLIC IT IF Th5
SLIC
Th5
VB AI6XANB
V Bat C1 D1 C2 AI6XAOB
VB
VBat C1 D1 C2
Figure 5. Negative Overvoltage Condition
Figure 6. Positive Overvoltage Condition
Negative overvoltages (Figure 5) are initially clipped close to the SLIC negative supply rail value (VB) by the conduction of the transistor baseemitter and the thyristor gate-cathode junctions. If sufficient current is available from the overvoltage, then the thyristor will crowbar into a low voltage ground referenced on-state condition. As the overvoltage subsides, the high holding current of the crowbar thyristor prevents d.c. latchup. The negative protection voltage will be the sum of the gate supply (VB) and the peak gate (terminal)-cathode voltage (VGK(BO) ). Under a.c. overvoltage conditions VGK(BO) will be less than 3 V. The integrated transistor buffer in the TISPPBL3 greatly reduces the gate positive current (from about 50 mA to 1 mA) and introduces a negative gate current. Figure 1 shows that the TISPPBL3 gate current depends on the current being conducted by the principal terminals. The gate current is positive during clipping (charging the VB supply) and negative when the thyristor is on or the diode is conducting (loading the VB supply). Without the negative gate current and the reduced level of positive gate current, the VB supply could be charged with a current of nearly 100 mA. The VB supply is likely to be electronic and would not be designed to be charged like a battery. As a result, the SLIC could be destroyed by the voltage of V B increasing to a level that exceeded the SLIC's capability on the VBAT pin. The integrated transistor buffer removes this problem. Fast rising impulses will cause short term overshoots in gate-cathode voltage. The negative protection voltage under impulse conditions will also be increased if there is a long connection between the gate decoupling capacitor, C1, and the gate terminal. During the initial rise of a fast impulse, the gate current (IG ) is the same as the cathode current (IK). Rates of 60 A/s can cause inductive voltages of 0.6 V in 2.5 cm of printed wiring track. To minimize this inductive voltage increase of protection voltage, the length of the capacitor to gate terminal tracking should be minimized. Inductive voltages in the protector cathode wiring can increase the protection voltage. These voltages can be minimized by routing the SLIC connection through the protector as shown in Figure 5 and Figure 6. Positive overvoltages (Figure 6) are clipped to ground by forward conduction of the diode section in the TISPPBL3. Fast rising impulses will cause short term overshoots in forward voltage (VFRM).
OCTOBER 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISPPBL3 Programmable Protector
APPLICATIONS INFORMATION
TISPPBL3 Limiting Voltages
Figure 3 shows the basic test circuit used for the measurement of impulse limiting voltage. During the impulse, the high levels of electrical energy and rapid rates of change cause electrical noise to be induced or conducted into the measurement system. It is possible for the electrical noise voltage to be many times the wanted signal voltage. Elaborate wiring and measurement techniques were used to reduce the noise voltage to less than 2 V peak to peak. A Keytek ECAT E-Class series 100 with an E505 surge network was used for testing. The E505 produces a 2/10 voltage impulse. This particular waveform was used as it has the fastest rate of current rise (di/dt) of the rated lightning surge waveforms. This maximizes the measured limiting voltage. Initially, the 2/10 wavefront current rises at 60 A/s; this rate then reduces as the peak current is approached. A large number of devices from different production runs were measured in the test circuit of Figure 3 over the rated temperature range. Statistical techniques were used to estimate the population 99.997% level (equal to 30 ppm) performance limits.
SLIC Protection Requirements
This clause discusses the voltage withstand capabilities of the various Ericsson Microelectronics SLIC groups and compares these to the TISPPBL3 protector parameters. The examples provided are intended to provide designers information on how the TISPPBL3 protector and specific SLICs work together. Designers should always follow the circuit design recommendations contained in the latest edition of an SLIC data sheet.
Temperature Range
Some SLICs are rated for 0 C to 70 C operation, others for -40 C to 85 C operation. The TISPPBL3 protector is specified for -40 C to 85 C operation and covers both temperature ranges.
Normal Operation
Depending on the SLIC type, the maximum SLIC supply voltage rating (VBat) will be -70 V, -80 V or -85 V. The -160 V rating of the TISPPBL3 gate-cathode (VGKRM) exceeds the highest SLIC voltage rating. To restore normal operation after the TISPPBL3 has switched on, the minimum switch-off current (holding current IH) needed is equal to the maximum SLIC short circuit current to ground (d.c. line current together with the maximum longitudinal current).
Maximum TIPX and RINGX Terminal Ratings
The withstand levels of an SLIC line drive amplifier TIPX and RINGX can be expressed in terms of maximum voltage for certain time periods. The negative voltage rating can be specified in two ways; relative to ground or relative to the SLIC negative supply voltage (VBat). The TIPX or RINGX voltage withstand levels for the current range of Ericsson SLICs falls into three groups, see Figure 7. The first group, headed by the PBL 3762A/2 SLIC, has a positive polarity d.c. withstand of +2 V. For 10 ms, the output can withstand a voltage of +5 V. For 1 s, the output can withstand a voltage of +10 V. For 250 ns, the output is able to withstand a voltage of +15 V. In the negative polarity, the output can withstand VBat continuously. For 10 ms, the output can withstand a voltage of VBat - 20 V. For 1 s, the output can withstand a voltage of VBat - 40 V. For 250 ns, the output is able to withstand a voltage of VBat -70 V. The second group, headed by the PBL 3766 SLIC, has a positive polarity d.c. withstand of +0.5 V For 10 ms, 1 s and 250 ns the withstand . voltage is the same as the PBL 3762A/2 group. In the negative polarity, the withstand voltage of the PBL 3766 group is the same as the PBL 3762A/2 group.
OCTOBER 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISPPBL3 Programmable Protector
APPLICATIONS INFORMATION
Maximum TIPX and RINGX Terminal Ratings (continued)
PART NUMBER PBL 3762A/2 PBL 3762A/4 PBL 3764A/4 PBL 3764A/6 PBL 3860A/1 PBL 3860A/6 PBL 386 10/2 PBL 386 11/2 PBL 386 14/2 PBL 386 15/2 PBL 386 61/2 PBL 386 65/2 PBL 387 10/1 MAXIMUM VOLTAGE RATINGS d.c. V BAT & +2 V, < 10 ms V BAT -20 V & +5 V, < 1 s V BAT -40 V & +10 V, < 250 ns V BAT -70 V & +15 V
TIPX or RINGX Voltage - V
15 10 5 0 10 ms 1 s 0.25 s VBat VBat - 10 VBat - 20 VBat - 30 VBat - 40 VBat - 50 VBat - 60 VBat - 70
Time
TIPX or RINGX VOLTAGE RATING vs TIME (NEGATIVE RATING RELATIVE TO VBat )
AI6XDBAA
PBL 3766 PBL 3766/6 PBL 3767 PBL 3767/6
d.c. V BAT & +0.5 V, < 10 ms V BAT -20 V & +5 V, < 1 s V BAT -40 V & +10 V, < 250 ns V BAT -70 V & +15 V
TIPX or RINGX Voltage - V
15 10 5 0 10 ms 1 s 0.25 s VBat VBat - 10 VBat - 20 VBat - 30 VBat - 40 VBat - 50 VBat - 60 VBat - 70
Time
TIPX or RINGX VOLTAGE RATING vs TIME (NEGATIVE RATING RELATIVE TO VBat )
AI6XDBAB
TIPX or RINGX Voltage - V
PBL 386 20/2 PBL 386 21/2 PBL 386 30/2 PBL 386 40/2 PBL 386 50/2
d.c. -80 V & +2 V, < 10 ms V BAT -10 V & +5 V, < 1 s V BAT -25 V & +10 V, < 250 ns V BAT -35 V & +15 V
15 10 5 0 10 ms 1 s 0.25 s VBat VBat - 10 VBat - 20 VBat - 30 VBat - 40
Time
-
TIPX or RINGX VOLTAGE RATING vs TIME (NEGATIVE IMPULSE RATING RELATIVE TO VBat )
AI6XDBAC
Figure 7. TIPX And RINGX Rated Values
OCTOBER 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISPPBL3 Programmable Protector
APPLICATIONS INFORMATION
Maximum TIPX and RINGX Terminal Ratings (continued)
The third group, headed by the PBL 386 20/2 SLIC, has the same positive polarity withstand as the PBL 3762A/2 group. In the negative polarity, the output can withstand -80 V continuously. For 10 ms, the output can withstand a voltage of VBat - 10 V. For 1 s, the output can withstand a voltage of VBat - 25 V. For 250 ns, the output is able to withstand a voltage of VBat -35 V.
Protection Requirements To Cover All SLICs
To protect all SLICs, the TISPPBL3 protector must limit the voltage to the lowest withstand levels of the three SLIC groups shown in Figure 7. Figure 8 shows that this will be the positive polarity rating of the PBL 3766 group and the negative rating of the PBL 386 20/2 group.
40 30 20 10 0 Voltage - V PBL 3766 GROUP
SLIC GROUP VOLTAGE RATINGS vs TIME
PBL3762A/2 AND PBL386 20/2 GROUPS
10 ms 1 s 0.25 s
Time
VBat VBat - 10 PBL 386 20/2 GROUP
VBat - 20 VBat - 30 VBat - 40 VBat - 50 VBat - 60 VBat - 70 PBL3762A/2 AND PBL3766 GROUPS
AI6XBDD
Figure 8. SLIC Voltage Ratings
TISPPBL3 Voltage Limiting Performance
Figure 9 shows how the TISPPBL3 protection voltages compare to the minimum voltage withstands of Figure 8. The two shaded areas represent the positive and negative maximum limiting voltage levels of the TISPPBL3 from Figure 2. The isolation diode voltage drop displaces the TISPPBL3 negative limiting voltage 1 s, -20 V pulse area by -0.7 V from VBat. So the actual negative limiting voltage is -20.7 V relative to VBat. This value does not exceed any part of the SLIC minimum negative voltage ratings. Any negative voltage disturbance in the VB supply caused by TISPPBL3 gate current will be tracked in VBat by conduction of the isolation diode D1. So a negative going change in VB does not substantially increase the TIPX and RINGX voltage stress relative to VBat. However, the absolute value of VBat with respect to ground must be kept within the data sheet rating. In the positive polarity, the TISPPBL3 limits the maximum voltage to 8 V in a 1 s period and between 1 V and 5 V for a 10 ms period. These values do not exceed any of the SLIC minimum positive voltage ratings. The TISPPBL3 supports negative supply voltages (VB) down to -150 V. In addition, there are maximum cathode overshoot voltages of -20 V and +8 V. These conditions require the TISPPBL3 to have an off-state rated voltage, VDRM , of -170 V (-150 + -20 = -170) and a gate-cathode rated voltage, VGKRM, of -160 V (-150 - +8 = -158) over the temperature range.
OCTOBER 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISPPBL3 Programmable Protector
APPLICATIONS INFORMATION
TISPPBL3 Voltage Limiting Performance (continued)
40 30 20 10 0 Voltage - V 10 ms 1 s 0.25 s VBAT 0.7 V ISOLATION DIODE (D1) VOLTAGE DROP FROM V Bat TISPPBL3 Time TISPPBL3
SLIC MINIMUM VOLTAGE WITHSTAND AND TISPPBL3 VOLTA GE LIMITING vs TIME
VBAT - 10 VBAT - 20 VBAT - 30 VBAT - 40 AI6XDF
Figure 9. SLIC Voltage Ratings And TISPPBL3 Protection Levels
Application Circuit
Figure 10 shows a typical TISPPBL3 SLIC card protection circuit. The incoming line conductors, R and T, connect to the relay matrix via the series overcurrent protection (RSA and RSB). Fusible resistors, fuses and positive temperature coefficient (PTC) thermistors can be used for overcurrent protection. Normally, the SLIC reference designs recommend using 40 matched fusible resistors, such as the Bourns 2x40 , 2 % tolerance, 0.5 % matched 4B04B-523-400 or the 4B04B-524-400 with a thermal fuse. These resistors will reduce the prospective current from the surge generator for both the TISPPBL3 and the ring/test protector. The TISP7xxxF3 protector has the same protection voltage for any terminal pair. This protector is used when the ring generator configuration may be ground or battery-backed. For dedicated ground-backed ringing generators, the TISP3xxxF3 gives better protection as its inter-conductor protection voltage is twice the conductor to ground value. Relay contacts 3a and 3b connect the line conductors to the SLIC via the TISPPBL3 protector. Closing contacts 3a and 3b connects the TISPPBL3 protector in parallel with the ring/test protector. As the ring/test protector requires much higher voltages than the TISPPBL3 to operate, it will only operate when the contacts 3a and 3b are open. Both protectors will divert the same levels of peak surge current, and their required current ratings should be similar. The TISPPBL3 protector gate reference voltage comes from the SLIC negative supply feed (VB). A local gate capacitor, C1, sources the gate current pulses caused by fast rising impulses.
OCTOBER 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISPPBL3 Programmable Protector
APPLICATIONS INFORMATION
SERIES RESISTANCE T WIRE RSA (INCLUDES OVER CURRENT PROTECTION) R WIRE Th3 RING/TEST PROTECTION Th1 S1a S2a SLIC Th2 TISP 3xxxF3 OR 7xxxF3 S3b S1b S2b TISP PBL3 VB TEST EQUIPMENT V Bat C1 D1 C2 Th5 TEST RELAY RING RELAY SLIC RELAY S3a SLIC PROTECTION Th4
RSB
RING GENERATOR
AI6XAP EB
Figure 10. Typical Application Circuit
Earlier Protection and SLIC Recommendations
The table below lists the combined SLIC and protection recommendations from earlier releases of the Ericsson Microelectronics AB SLICs. The TISPPBL3 is a functional replacement for the TISPPBL1 and the TISPPBL2.
SLIC TISPPBL1 TISPPBL2 PBL 3796 < 55 mA PBL 3796/2 < 55 mA PBL 3798 < 55 mA PBL 3798/2 < 55 mA PBL 3798/5 < 55 mA PBL 3798/6 PBL 3799 PBL 3799/2 PBL 386 20/1 PBL 386 21/1 PBL 386 30/1 PBL 386 40/1 PBL 386 50/1 Product Change Notification 109 21-PBL 386 xx/1-1 Uen of 06-06-1999 improved the silicon design of the PBL 386 20/1, PBL 386 21/1, PBL 386 30/1, PBL 386 40/1 and PBL 386 50/1. These improved devices are designated by a /2 as PBL 386 20/2, PBL 386 21/2, PBL 386 30/2, PBL 386 40/2 and PBL 386 50/2 respectively. Use TISPPBL2 when programmed line current is above 55 mA.
OCTOBER 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISPPBL3 Programmable Protector
MECHANICAL DATA
Device Symbolization Code
Devices will be coded as follows:
Device TISPPBL3
Symbolization Code SPPBL3
OCTOBER 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISPPBL3 Programmable Protector
MECHANICAL DATA
D008 Plastic Small-outline Package
This small-outline package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
D008
4.80 - 5.00 (0.189 - 0.197)
8-pin Small Outline Microelectronic Standard Package MS-012, JEDEC Publication 95
8
7
6
5
5.80 - 6.20 (0.228 - 0.244)
INDEX
3.81 - 4.00 (0.150 - 0.157)
1
2
3
4
1.35 - 1.75 (0.053 - 0.069)
7 NOM 3 Places
0.25 - 0.50 x 45 N0M (0.010 - 0.020)
4.60 - 5.21 (0.181 - 0.205)
0.102 - 0.203 (0.004 - 0.008) 0.28 - 0.79 (0.011 - 0.031)
0.36 - 0.51 (0.014 - 0.020) 8 Places Pin Spacing 1.27 (0.050) (see Note A) 6 places 0.190 - 0.229 (0.0075 - 0.0090)
7 NOM 4 Places
44
0.51 - 1.12 (0.020 - 0.044)
DIMENSIONS ARE:
MILLIMETERS (INCHES)
NOTES: A. B. C. D.
Leads are within 0.25 (0.010) radius of true position at maximum material condition. Body dimensions do not include mold flash or protrusion. Mold flash or protrusion shall not exceed 0.15 (0.006). Lead tips to be planar within 0.051 (0.002).
MDXX AAC
OCTOBER 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.
TISPPBL3 Programmable Protector
MECHANICAL DATA
D008 Tape DImensions
D008 Package (8-pin Small Outline) Single-Sprocket Tape
3.90 - 4.10 (.154 - .161)
1.50 - 1.60 (.059 - .063)
7.90 - 8.10 (.311 - .319)
1.95 - 2.05 (.077 - .081) 0.8 MIN. (0.03)
0.40 (0.016)
5.40 - 5.60 (.213 - .220)
11.70 - 12.30 (.461 - .484)
6.30 - 6.50 (.248 - .256)
o
1.50 MIN. (.059)
0 MIN.
Cover Tape
Carrier Tape Embossment
Direction of Feed
2.0 - 2.2 (.079 - .087)
DIMENSIONS ARE:
MILLIMETERS (INCHES)
NOTES: A. Taped devices are supplied on a reel of the following dimensions:Reel diameter: Reel hub diameter: Reel axial hole:
330 +0.0/-4.0 (12.992 +0.0/-.157) 100 2.0 (3.937 .079) 13.0 0.2 (.512 .008)
MDXXATB
B. 2500 devices are on a reel.
"TISP" is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Office. "Bourns" is a registered trademark of Bourns, Inc. in the U.S. and other countries.
OCTOBER 2000 - REVISED FEBRUARY 2005 Specifications are subject to change without notice. Customers should verify actual device performance in their specific applications.

▲Up To Search▲

Price & Availability of TISPPBL3

	To Download TISPPBL3 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .